InAsSb-based detectors on GaSb for near-room-temperature operation in the mid-wave infrared

III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb–InAs strained layer superlattice, operation close to room temperature was demonstrated with cutoff wavelengths of 4.82 5.79 μm, respectively, zero-bias possible detector. X-ray diffraction, dependent dark current, spectral quantum efficiency measured, analysis based calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate that these optimized devices may be as alternatives InSb, or even HgCdTe, many applications, especially where available power is limited.